P-channel single power MOSFET featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 36A. This device offers a low drain-source on-resistance of 37.5mΩ, a pulsed drain current capability of 108A, and a maximum power dissipation of 56W. Designed for switching applications, it utilizes silicon metal-oxide semiconductor FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. Operating up to 175°C, it is RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas NP36P06KDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
54mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
36A
Drain Current-Max (ID)
36A
Drain-source On Resistance-Max
37.5mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
56W
Pulsed Drain Current-Max (IDM)
108A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP36P06KDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP36P06KDG-E1-AY to view detailed technical specifications.
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