Quick Jump:
Technical Specifications
Renesas NP50P03YDG-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 50A |
| Drain Current-Max (ID) | 50A |
| Drain-source On Resistance-Max | 13mR |
| DS Breakdown Voltage-Min | 30V |
| Feedback Cap-Max (Crss) | 580pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 102W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP50P03YDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP50P03YDG-E1-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
