P-channel MOSFET with 40V drain-source breakdown voltage and 50A continuous drain current. Features 15mΩ maximum drain-source on-resistance and 150A pulsed drain current. Operates up to 175°C with 90W maximum power dissipation. This surface-mount component utilizes silicon FET technology in a TO-263AB package with gull-wing terminals. Suitable for switching applications.
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Technical Specifications
Renesas NP50P04KDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
136mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
50A
Drain Current-Max (ID)
50A
Drain-source On Resistance-Max
15mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
90W
Pulsed Drain Current-Max (IDM)
150A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP50P04KDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP50P04KDG-E1-AY to view detailed technical specifications.
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