P-channel single power MOSFET featuring a -60V drain-source breakdown voltage and a maximum continuous drain current of 50A. This component offers a low drain-source on-resistance of 23mΩ (maximum) and a pulsed drain current capability of 150A. Designed for switching applications, it operates within a maximum temperature of 175°C and has a maximum power dissipation of 90W. The device utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals.
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Technical Specifications
Renesas NP50P06KDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
106mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
50A
Drain Current-Max (ID)
50A
Drain-source On Resistance-Max
23mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
90W
Pulsed Drain Current-Max (IDM)
150A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP50P06KDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP50P06KDG-E1-AY to view detailed technical specifications.
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