N-Channel Power MOSFET, designed for switching applications, features a 30V drain-source breakdown voltage and a maximum continuous drain current of 55A, with a pulsed drain current capability of 220A. This silicon MOSFET offers a low drain-source on-resistance of 5mR and a maximum operating temperature of 175°C. Encased in a rectangular plastic TO-252AA (R-PSSO-G2) package with gull-wing terminals for surface mounting, it provides a maximum absolute power dissipation of 77W.
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Technical Specifications
Renesas NP55N03SUG-E1-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
55A
Drain Current-Max (ID)
55A
Drain-source On Resistance-Max
5mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
77W
Pulsed Drain Current-Max (IDM)
220A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP55N03SUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP55N03SUG-E1-AY to view detailed technical specifications.
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