The NP55N04SUG-E2 is a 40V N-Channel Enhancement MOSFET with a maximum continuous drain current of 55A. It features a typical RDS-on of 6.5mOhm at 10V and a maximum gate source voltage of ±20V. The device operates over a temperature range of -55 to 175°C and is suitable for surface mount applications. It is a discrete semiconductor component manufactured by Renesas Electronics.
Package3TO-252
Temp Range-55 to 175 °C
MountingSurface Mount
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Technical Specifications
Renesas NP55N04SUG-E2 technical specifications.
General
| Channel Type | N |
| Rad Hard | No |
| Package | 3TO-252 |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 40 V |
| Maximum Continuous Drain Current | 55 A |
| RDS-on | 6.5@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 30 ns |
| Typical Rise Time | 52 ns |
| Typical Turn-Off Delay Time | 78 ns |
| Typical Fall Time | 12 ns |
| Operating Temperature | -55 to 175 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Renesas Electronics |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NP55N04SUG-E2 Datasheet
Download the complete datasheet for Renesas NP55N04SUG-E2 to view detailed technical specifications.
No datasheet is available for this part.