N-channel power MOSFET with a maximum drain current of 55A and a drain-source breakdown voltage of 55V. Features a low on-resistance of 12mΩ, enabling efficient switching applications. This surface-mount device utilizes Metal-Oxide Semiconductor FET technology and is housed in a TO-252AA (small outline) package with gull-wing terminals. Maximum power dissipation is 288W, with a peak pulsed drain current capability of 220A and an operating temperature range up to 175°C.
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Technical Specifications
Renesas NP55N055SDG technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 55A |
| Drain Current-Max (ID) | 55A |
| Drain-source On Resistance-Max | 12mR |
| DS Breakdown Voltage-Min | 55V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 288W |
| Pulsed Drain Current-Max (IDM) | 220A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NP55N055SDG Datasheet
Download the complete datasheet for Renesas NP55N055SDG to view detailed technical specifications.
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