P-channel MOSFET transistor designed for switching applications. Features a 40V drain-source breakdown voltage and a maximum continuous drain current of 75A. Offers a low on-resistance of 14mR and a maximum power dissipation of 138W. Operates up to 175°C and is housed in a small outline rectangular plastic package with flat, dual terminals. Compliant with RoHS and REACH SVHC standards.
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Technical Specifications
Renesas NP75P04YLG-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain Current-Max (ID) | 75A |
| Drain-source On Resistance-Max | 14mR |
| DS Breakdown Voltage-Min | 40V |
| Feedback Cap-Max (Crss) | 450pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 138W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP75P04YLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP75P04YLG-E1-AY to view detailed technical specifications.
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