N-channel MOSFET transistor designed for switching applications. Features a maximum drain-source breakdown voltage of 40V and a continuous drain current of 80A, with a pulsed drain current capability of 280A. Offers a low maximum drain-source on-resistance of 8mΩ. Operates with a maximum power dissipation of 120W and a maximum operating temperature of 175°C. This component utilizes metal-oxide semiconductor FET technology and is housed in a TO-262AA package with through-hole terminals.
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Technical Specifications
Renesas NP80N04NHE-S18-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 169mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 80A |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 8mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-262AA |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 120W |
| Pulsed Drain Current-Max (IDM) | 280A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP80N04NHE-S18-AY Datasheet
Download the complete datasheet for Renesas NP80N04NHE-S18-AY to view detailed technical specifications.
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