N-channel single power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 80A. This component offers a low drain-source on-resistance of 4.5mΩ, ideal for switching applications. Encased in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals, it supports a maximum absolute power dissipation of 115W and operates up to 175°C. The silicon FET technology ensures efficient performance with a pulsed drain current capability of 300A.
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Technical Specifications
Renesas NP80N04PLG-E1B-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
80A
Drain Current-Max (ID)
80A
Drain-source On Resistance-Max
4.5mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
115W
Pulsed Drain Current-Max (IDM)
300A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP80N04PLG-E1B-AY Datasheet
Download the complete datasheet for Renesas NP80N04PLG-E1B-AY to view detailed technical specifications.
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