
N-channel single power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 80A. This component offers a low drain-source on-resistance of 4.5mΩ, ideal for switching applications. Encased in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals, it supports a maximum absolute power dissipation of 115W and operates up to 175°C. The silicon FET technology ensures efficient performance with a pulsed drain current capability of 300A.
Renesas NP80N04PLG-E1B-AY technical specifications.
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