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Technical Specifications
Renesas NP80N055PDG-E1B-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
80A
Drain Current-Max (ID)
80A
Drain-source On Resistance-Max
6.6mR
DS Breakdown Voltage-Min
55V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
115W
Pulsed Drain Current-Max (IDM)
200A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP80N055PDG-E1B-AY Datasheet
Download the complete datasheet for Renesas NP80N055PDG-E1B-AY to view detailed technical specifications.
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