N-channel single power MOSFET with a 60V drain-source breakdown voltage and 80A continuous drain current. Features low 8.3mΩ drain-source on-resistance and 180A pulsed drain current. Designed for switching applications, this silicon MOSFET operates up to 175°C and is housed in a TO-263AB (R-PSSO-G2) plastic package with gull-wing terminals for surface mounting. Maximum power dissipation is 115W.
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Technical Specifications
Renesas NP80N06PLG-E1B-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
80A
Drain Current-Max (ID)
80A
Drain-source On Resistance-Max
8.3mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
115W
Pulsed Drain Current-Max (IDM)
180A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP80N06PLG-E1B-AY Datasheet
Download the complete datasheet for Renesas NP80N06PLG-E1B-AY to view detailed technical specifications.
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