N-channel single power MOSFET with a 60V drain-source breakdown voltage and 80A continuous drain current. Features low 8.3mΩ drain-source on-resistance and 180A pulsed drain current. Designed for switching applications, this silicon MOSFET operates up to 175°C and is housed in a TO-263AB (R-PSSO-G2) plastic package with gull-wing terminals for surface mounting. Maximum power dissipation is 115W.
Renesas NP80N06PLG-E1B-AY technical specifications.
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