N-channel single power MOSFET with a 60V drain-source breakdown voltage and 80A continuous drain current. Features low 8.3mΩ drain-source on-resistance and 180A pulsed drain current. Designed for switching applications, this silicon MOSFET operates up to 175°C and is housed in a TO-263AB (R-PSSO-G2) plastic package with gull-wing terminals for surface mounting. Maximum power dissipation is 115W.
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Technical Specifications
Renesas NP80N06PLG-E1B-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 80A |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 8.3mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 115W |
| Pulsed Drain Current-Max (IDM) | 180A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP80N06PLG-E1B-AY Datasheet
Download the complete datasheet for Renesas NP80N06PLG-E1B-AY to view detailed technical specifications.
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