The NP82N03PUG-E1-AY is a single N-channel metal-oxide semiconductor MOSFET with a maximum drain current of 82A and a maximum power dissipation of 143W. It operates within a temperature range of -40°C to 175°C and is compliant with RoHS and SVHC regulations. This surface-mount device is suitable for high-power applications.
Quick Jump:
Technical Specifications
Renesas NP82N03PUG-E1-AY technical specifications.
General
| Drain Current-Max (Abs) (ID) | 82A |
| Drain Current-Max (ID) | 82A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 143W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP82N03PUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP82N03PUG-E1-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
