N-channel MOSFET with a 40V drain-source breakdown voltage and a maximum continuous drain current of 82A. Features a low 8mΩ maximum drain-source on-resistance. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a TO-263AB package with gull-wing terminals. Designed for switching applications, it offers a maximum power dissipation of 143W and operates up to 175°C.
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Technical Specifications
Renesas NP82N04PDG-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 82A |
| Drain Current-Max (ID) | 82A |
| Drain-source On Resistance-Max | 8mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 143W |
| Pulsed Drain Current-Max (IDM) | 328A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP82N04PDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP82N04PDG-E1-AY to view detailed technical specifications.
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