N-channel power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 88A. Achieves a low drain-source on-resistance of 4.3mΩ. Offers a maximum power dissipation of 288W and an avalanche energy rating of 562mJ. Packaged in a TO-220AB (MP-25) configuration with through-hole mounting and tin terminal finish. Suitable for switching applications.
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Technical Specifications
Renesas NP88N04CHE technical specifications.
General
| Avalanche Energy Rating (Eas) | 562mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 88A |
| Drain Current-Max (ID) | 88A |
| Drain-source On Resistance-Max | 4.3mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 288W |
| Pulsed Drain Current-Max (IDM) | 352A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NP88N04CHE Datasheet
Download the complete datasheet for Renesas NP88N04CHE to view detailed technical specifications.
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