The NP90N04VLG-E1-AY is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 90A and a minimum breakdown voltage of 40V. It has a maximum power dissipation of 105W and is packaged in a small outline (TO-252) with a R-PSSO-G2 footprint. The device is suitable for switching applications and is RoHS compliant. It can operate at a maximum temperature of 175°C and is suitable for surface mount technology. The MOSFET is made of silicon and has a drain-source on resistance of 4mΩ.
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Technical Specifications
Renesas NP90N04VLG-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 90A |
| Drain Current-Max (ID) | 90A |
| Drain-source On Resistance-Max | 4mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 105W |
| Pulsed Drain Current-Max (IDM) | 300A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP90N04VLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP90N04VLG-E1-AY to view detailed technical specifications.
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