Async SRAM chip, 1M-bit density organized as 128K x 8. Features 55ns maximum access time and 3V/3.3V power supplies. CMOS technology, 3-state output characteristics, and parallel interface. Operates from 2.7V to 3.6V with a maximum supply current of 25mA and a standby current of 2uA. Packaged in a 32-pin TSOP-I (R-PDSO-G32) with a 0.5mm terminal pitch, suitable for surface mounting. Commercial temperature grade, RoHS compliant.
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Technical Specifications
Renesas R1LV0108ESF-5SR#B0 technical specifications.
General
Access Time-Max
55ns
Density
1048576b
I/O Type
COMMON
JESD-30 Code
R-PDSO-G32
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Supply Current
25mA
Memory Type
SRAM,
Memory Width
8
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
131072
Number of Words Code
128K
Organization
128KX8
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
SOP
Package Equivalence Code
TSSOP32,.8,20
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Parallel/Serial
PARALLEL
Power Supplies
3/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
2uA
Standby Voltage-Min
2V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Gull Wing
Terminal Pitch
0.5mm
Terminal Position
DUAL
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0108ESF-5SR#B0 Datasheet
Download the complete datasheet for Renesas R1LV0108ESF-5SR#B0 to view detailed technical specifications.
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