4Mbit CMOS SRAM, organized as 256K x 16, offers a maximum access time of 55ns. This parallel memory component operates with a supply voltage range of 2.7V to 3.6V, featuring a nominal 3V supply. Packaged in a 44-lead TSOP2 (R-PDSO-G44) with gull wing terminals and 0.8mm pitch, it is designed for surface mounting. The industrial temperature grade supports operation from -40°C to 85°C, with a moisture sensitivity level of 2.
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Technical Specifications
Renesas R1LV0416DSB-5SI#B0 technical specifications.
General
Access Time-Max
55ns
Density
4194304b
Height - Seated (Max)
1.2mm
JESD-30 Code
R-PDSO-G44
Length
18.41mm
Max Operating Temperature
85°C
Memory Type
SRAM,
Memory Width
16
Min Operating Temperature
-40°C
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
262144
Number of Words Code
256K
Organization
256KX16
Package Body Material
Plastic
Package Code
TSOP2
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILEMeter
Parallel/Serial
PARALLEL
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
0.8mm
Terminal Position
DUAL
Width
10.16mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0416DSB-5SI#B0 Datasheet
Download the complete datasheet for Renesas R1LV0416DSB-5SI#B0 to view detailed technical specifications.
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