Industrial temperature grade CMOS SRAM with 8Mbit density, organized as 512K x 16 bits. Features a maximum access time of 55ns and operates from 2.4V to 3.6V supply voltage. This parallel interface memory component is surface mountable in a 44-pin TSOP2 package, offering 3-state output characteristics and a low standby current of 4uA.
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Technical Specifications
Renesas R1LV0816ASB-5SI#B0 technical specifications.
General
Access Time-Max
55ns
Density
8388608b
Height - Seated (Max)
1.2mm
I/O Type
COMMON
JESD-30 Code
R-PDSO-G44
Length
18.41mm
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Current
35mA
Memory Type
SRAM,
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Words
524288
Number of Words Code
512K
Organization
512KX16
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
TSOP2
Package Equivalence Code
TSOP44,.46,32
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
2.5/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
4uA
Standby Voltage-Min
1.5V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.4V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
0.8mm
Terminal Position
DUAL
Width
10.16mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0816ASB-5SI#B0 Datasheet
Download the complete datasheet for Renesas R1LV0816ASB-5SI#B0 to view detailed technical specifications.
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