8Mbit CMOS SRAM, organized as 512K x 16, offers a 70ns maximum access time. This parallel interface memory features common I/O and 3-state output characteristics. Operating from 2.5V or 3.3V power supplies, it consumes a maximum of 35mA active current and a low 4uA standby current. Packaged in a 44-pin TSOP with a 0.8mm terminal pitch, this surface-mount component is rated for industrial temperatures (-40°C to 85°C) and is RoHS compliant.
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Technical Specifications
Renesas R1LV0816ASB-7SI#B0 technical specifications.
General
Access Time-Max
70ns
Density
8388608b
I/O Type
COMMON
JESD-30 Code
R-PDSO-G44
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Current
35mA
Memory Type
SRAM,
Memory Width
16
Moisture Sensitivity Level
3
Number of Words
524288
Number of Words Code
512K
Organization
512KX16
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
TSOP
Package Equivalence Code
TSOP44,.46,32
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILEMeter
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Power Supplies
2.5/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
4uA
Standby Voltage-Min
1.5V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
0.8mm
Terminal Position
DUAL
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0816ASB-7SI#B0 Datasheet
Download the complete datasheet for Renesas R1LV0816ASB-7SI#B0 to view detailed technical specifications.
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