256Kbit CMOS SRAM, organized as 32K x 8, offers a maximum access time of 55ns. This parallel memory component features 3-state outputs and operates from a 3V nominal supply voltage, with a range of 2.7V to 3.6V. The device is housed in a 28-pin TSOP package with a 0.55mm terminal pitch, suitable for surface mounting. It boasts a maximum operating temperature of 70°C and a low standby current of 8uA.
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Technical Specifications
Renesas R1LV5256ESA-5SR#B0 technical specifications.
General
Access Time-Max
55ns
Density
262144b
Height - Seated (Max)
1.2mm
I/O Type
COMMON
JESD-30 Code
R-PDSO-G28
Length
11.8mm
Max Operating Temperature
70°C
Memory Type
SRAM,
Memory Width
8
Min Operating Temperature
0°C
Max Supply Current
25mA
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
32768
Number of Words Code
32K
Organization
32KX8
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
TSOP
Package Equivalence Code
TSSOP28,.53,22
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
3/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
8uA
Standby Voltage-Min
2V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Gull Wing
Terminal Pitch
0.55mm
Terminal Position
DUAL
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV5256ESA-5SR#B0 Datasheet
Download the complete datasheet for Renesas R1LV5256ESA-5SR#B0 to view detailed technical specifications.
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