Synchronous SRAM chip with 36M-bit density, featuring a 4M x 9-bit configuration and QDR data rate architecture. Offers a maximum access time of 0.45 ns and a maximum clock rate of 200 MHz. This dual-port memory operates at 1.8V, with a voltage range of 1.7V to 1.9V. Packaged in a 165-pin Fine Pitch Ball Grid Array (FBGA) for surface mounting, with dimensions of 17mm x 15mm x 1.08mm and a 1mm pin pitch. Operates across a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Renesas R1Q2A3609BBG-50IB technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
165
PCB
165
Package Length (mm)
17
Package Width (mm)
15
Package Height (mm)
1.08
Seated Plane Height (mm)
1.4
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
36Mbit
Address Bus Width
21bit
Maximum Access Time
0.45ns
Timing Type
Synchronous
Maximum Clock Rate
200MHz
Data Rate Architecture
QDR
Density in Bits
37748736bit
Maximum Operating Current
550mA
Typical Operating Supply Voltage
1.8V
Number of Bits per Word
9bit
Number of Ports
2
Number of Words
4M
Min Operating Supply Voltage
1.7V
Max Operating Supply Voltage
1.9V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8542320041
Schedule B
8542320040
ECCN
3A991.b.2.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas R1Q2A3609BBG-50IB Datasheet
Download the complete datasheet for Renesas R1Q2A3609BBG-50IB to view detailed technical specifications.
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