Synchronous SRAM chip with 36M-bit density, featuring a 1M x 36 configuration and QDR architecture. Offers a maximum access time of 0.45 ns and a maximum clock rate of 250 MHz. Operates at a typical supply voltage of 1.8V, with a voltage range of 1.7V to 1.9V. Packaged in a 165-pin FBGA (Fine Pitch Ball Grid Array) with surface mount capability, measuring 17mm x 15mm x 1.08mm. Suitable for operation across a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Renesas R1Q2A3636BBG-40IS technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
165
PCB
165
Package Length (mm)
17
Package Width (mm)
15
Package Height (mm)
1.08
Seated Plane Height (mm)
1.4
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
36Mbit
Address Bus Width
19bit
Maximum Access Time
0.45ns
Timing Type
Synchronous
Maximum Clock Rate
250MHz
Data Rate Architecture
QDR
Density in Bits
37748736bit
Maximum Operating Current
700mA
Typical Operating Supply Voltage
1.8V
Number of Bits per Word
36bit
Number of Ports
2
Number of Words
1M
Min Operating Supply Voltage
1.7V
Max Operating Supply Voltage
1.9V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8542320041
Schedule B
8542320040
ECCN
3A991.b.2.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas R1Q2A3636BBG-40IS Datasheet
Download the complete datasheet for Renesas R1Q2A3636BBG-40IS to view detailed technical specifications.
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