4M x 16 bit CMOS SRAM, organized as 4M words by 16 bits, offers a maximum access time of 55ns. This parallel interface memory operates with a 3V nominal supply voltage, ranging from 2.7V to 3.6V, and features common I/O with 3-state output characteristics. Packaged in a 48-ball rectangular grid array (BGA) with a 0.75mm terminal pitch, this industrial temperature grade component supports surface mounting and has a peak reflow temperature of 225°C. It exhibits a maximum operating temperature of 85°C and a minimum of -40°C, with a maximum supply current of 60mA and a standby current of 24uA.
Quick Jump:
Technical Specifications
Renesas R1WV6416RBG-5SI technical specifications.
General
| Access Time-Max | 55ns |
| Alternate Memory Width | 8 |
| Density | 67108864b |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B48 |
| Max Operating Temperature | 85°C |
| Max Supply Current | 60mA |
| Memory Type | SRAM, |
| Memory Width | 16 |
| Min Operating Temperature | -40°C |
| Moisture Sensitivity Level | 1 |
| Number of Functions | 1 |
| Number of Words | 4194304 |
| Number of Words Code | 4M |
| Organization | 4MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | Plastic |
| Package Code | BGA |
| Package Shape | Rectangular |
| Package Style | GRID ARRAYMeter |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 225°C |
| Power Supplies | 3/3.3V |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Standby Current-Max | 24uA |
| Standby Voltage-Min | 2.7V |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | Ball |
| Terminal Pitch | 0.75mm |
| Terminal Position | BOTTOM |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas R1WV6416RBG-5SI Datasheet
Download the complete datasheet for Renesas R1WV6416RBG-5SI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.