N-channel IGBT chip for surface mount applications, featuring a 600V collector-emitter voltage and 30A continuous collector current. This single IGBT is housed in an LDPAK(S)-1 (TO-252) package with gull-wing leads, offering a 3-pin configuration with a tab for enhanced thermal performance. With a maximum power dissipation of 113000mW and a typical collector-emitter saturation voltage of 1.9V, it operates across a wide temperature range from -55°C to 150°C. The plastic package measures 10.2mm x 8.6mm x 4.44mm, with a seated plane height of 4.54mm and a pin pitch of 2.54mm.
Renesas RJH60A85RDPE-00#J3 technical specifications.
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