N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 10A continuous collector current. Packaged in a 3-pin DPAK(S) (TO-252) with gull-wing leads, offering a 2.29mm pin pitch and a compact 6.5mm x 5.5mm x 2.3mm footprint. Operates across a wide temperature range from -55°C to 150°C.
PackageDPAK(S)
MountingSurface Mount
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Technical Specifications
Renesas RJH60C9DPD-00-J2 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK(S)
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.75(Max)
Pin Pitch (mm)
2.29
Package Weight (g)
0.28
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AB
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
10A
Typical Collector Emitter Saturation Voltage
2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJH60C9DPD-00-J2 Datasheet
Download the complete datasheet for Renesas RJH60C9DPD-00-J2 to view detailed technical specifications.
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