
N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 10A continuous collector current. Packaged in a 3-pin DPAK(S) (TO-252) with gull-wing leads, offering a 2.29mm pin pitch and a compact 6.5mm x 5.5mm x 2.3mm footprint. Operates across a wide temperature range from -55°C to 150°C.
Renesas RJH60C9DPD-00-J2 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK(S) |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.75(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Weight (g) | 0.28 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 10A |
| Typical Collector Emitter Saturation Voltage | 2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Renesas RJH60C9DPD-00-J2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.