N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a 600V collector-emitter voltage, 75A continuous collector current, and 200,000mW power dissipation. This single-configuration IGBT offers a typical collector-emitter saturation voltage of 2V and operates across a temperature range of -55°C to 150°C. The TO-247 package has 3 pins plus a tab, with a pin pitch of 5.45mm.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Renesas RJH60D5DPQ-E0#T2 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.94 |
| Package Width (mm) | 5.02 |
| Package Height (mm) | 21.13 |
| Seated Plane Height (mm) | 25.96(max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 75A |
| Maximum Power Dissipation | 200000mW |
| Typical Collector Emitter Saturation Voltage | 2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Renesas RJH60D5DPQ-E0#T2 Datasheet
Download the complete datasheet for Renesas RJH60D5DPQ-E0#T2 to view detailed technical specifications.
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