N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V collector-emitter voltage and 80A continuous collector current. Housed in a TO-247 package with 3 pins and a tab, offering a maximum power dissipation of 260,000mW. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Renesas RJH60D6DPQ-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.94
Package Width (mm)
5.02
Package Height (mm)
21.13
Seated Plane Height (mm)
25.96(max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
80A
Maximum Power Dissipation
260000mW
Typical Collector Emitter Saturation Voltage
1.8V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJH60D6DPQ-E0#T2 Datasheet
Download the complete datasheet for Renesas RJH60D6DPQ-E0#T2 to view detailed technical specifications.
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