N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a maximum collector-emitter voltage of 600V and a maximum continuous collector current of 90A. Offers a maximum power dissipation of 300,000mW and a typical collector-emitter saturation voltage of 1.8V. Operates across a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Renesas RJH60D7DPQ-E0#T2 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.94 |
| Package Width (mm) | 5.02 |
| Package Height (mm) | 21.13 |
| Seated Plane Height (mm) | 25.96(max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 90A |
| Maximum Power Dissipation | 300000mW |
| Typical Collector Emitter Saturation Voltage | 1.8V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJH60D7DPQ-E0#T2 Datasheet
Download the complete datasheet for Renesas RJH60D7DPQ-E0#T2 to view detailed technical specifications.
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