N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a maximum collector-emitter voltage of 600V and a maximum continuous collector current of 90A. Offers a maximum power dissipation of 300,000mW and a typical collector-emitter saturation voltage of 1.8V. Operates across a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Renesas RJH60D7DPQ-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.94
Package Width (mm)
5.02
Package Height (mm)
21.13
Seated Plane Height (mm)
25.96(max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
90A
Maximum Power Dissipation
300000mW
Typical Collector Emitter Saturation Voltage
1.8V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJH60D7DPQ-E0#T2 Datasheet
Download the complete datasheet for Renesas RJH60D7DPQ-E0#T2 to view detailed technical specifications.
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