N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mounting. Features 600V collector-emitter voltage and 35A continuous collector current. This single IGBT offers 113000mW maximum power dissipation and a typical 2.2V collector-emitter saturation voltage. Packaged in an LDPAK(S)-1 (TO-252) with gull-wing leads, it operates from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJH60M3DPE-00#J3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | LDPAK(S)-1 |
| Package Description | Large Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 8.6 |
| Package Height (mm) | 4.44 |
| Seated Plane Height (mm) | 4.54 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 35A |
| Maximum Power Dissipation | 113000mW |
| Typical Collector Emitter Saturation Voltage | 2.2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJH60M3DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJH60M3DPE-00#J3 to view detailed technical specifications.
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