N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mounting. Features 600V collector-emitter voltage and 35A continuous collector current. This single IGBT offers 113000mW maximum power dissipation and a typical 2.2V collector-emitter saturation voltage. Packaged in an LDPAK(S)-1 (TO-252) with gull-wing leads, it operates from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJH60M3DPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
35A
Maximum Power Dissipation
113000mW
Typical Collector Emitter Saturation Voltage
2.2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJH60M3DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJH60M3DPE-00#J3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.