N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 16A continuous collector current. This single IGBT offers a maximum power dissipation of 52000mW and a typical collector-emitter saturation voltage of 2.2V. Packaged in an LDPAK(S)-1 (TO-252) plastic housing with gull-wing leads, it operates from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJH60V1BDPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single Dual Collector
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
16A
Maximum Power Dissipation
52000mW
Typical Collector Emitter Saturation Voltage
2.2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJH60V1BDPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJH60V1BDPE-00#J3 to view detailed technical specifications.
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