N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features 600V collector-emitter voltage and 25A continuous collector current. Maximum power dissipation is 63000mW. Packaged in an LDPAK(S)-1 (TO-252) with gull-wing leads, offering a 3-pin configuration with a tab. Operating temperature range from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJH60V2BDPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
25A
Maximum Power Dissipation
63000mW
Typical Collector Emitter Saturation Voltage
2.2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJH60V2BDPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJH60V2BDPE-00#J3 to view detailed technical specifications.
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