P-channel Power MOSFET featuring 60V drain-source voltage and 25A continuous drain current. This single-element transistor operates in enhancement mode with a low 56mΩ maximum drain-source resistance at 10V. Housed in a TO-220FP package with 3 through-hole pins and a tab, it offers a maximum power dissipation of 25000mW and operates from -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJJ0621DPP-E0-T2 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.05 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 25A |
| Maximum Drain Source Resistance | 56@10VmOhm |
| Typical Input Capacitance @ Vds | 1550@10VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Renesas RJJ0621DPP-E0-T2 Datasheet
Download the complete datasheet for Renesas RJJ0621DPP-E0-T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.