N-channel Power MOSFET, 25V drain-source voltage, 30A continuous drain current, and 4.6mΩ maximum drain-source resistance at 10V. Features a single quad drain triple source configuration in an 8-pin HWSON surface-mount package with a 0.65mm pin pitch. Operates from -55°C to 150°C with a maximum power dissipation of 20000mW.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas RJK0240DNS-00-J5 technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
30A
Material
Si
Maximum Drain Source Resistance
4.6@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1850@10VpF
Maximum Power Dissipation
20000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK0240DNS-00-J5 Datasheet
Download the complete datasheet for Renesas RJK0240DNS-00-J5 to view detailed technical specifications.
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