N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 55A continuous drain current. This single-element silicon transistor is housed in a 5-pin LFPAK surface-mount package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Key electrical characteristics include a maximum drain-source on-resistance of 2.5mΩ at 10V and a typical gate charge of 33nC at 4.5V. Operating across a temperature range of -55°C to 150°C, this component offers a maximum power dissipation of 60,000mW.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK03C2DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
55A
Material
Si
Maximum Drain Source Resistance
2.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
4900@10VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK03C2DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK03C2DPB-00-J5 to view detailed technical specifications.
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