N-channel enhancement mode power MOSFET, silicon, 30V drain-source voltage, 30A continuous drain current. Features 5.5mΩ maximum drain-source resistance at 8V Vgs, 23.6nC typical gate charge at 4.5V Vgs, and 2950pF typical input capacitance at 10V Vds. Single element per chip, configured as Quad Drain Triple Source. Packaged in an 8-pin HWSON EP (SON family) surface-mount plastic package with no leads, measuring 3.1mm x 2.9mm x 0.8mm(Max).
PackageHWSON EP
MountingSurface Mount
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Technical Specifications
Renesas RJK03K8DNS-00-J5 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
HWSON EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
2.9
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Package Weight (g)
0.022
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
30A
Material
Si
Maximum Drain Source Resistance
5.5@8VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2950@10VpF
Maximum Power Dissipation
20000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK03K8DNS-00-J5 Datasheet
Download the complete datasheet for Renesas RJK03K8DNS-00-J5 to view detailed technical specifications.
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