N-channel enhancement mode power MOSFET, silicon, 30V drain-source voltage, 30A continuous drain current. Features 5.5mΩ maximum drain-source resistance at 8V Vgs, 23.6nC typical gate charge at 4.5V Vgs, and 2950pF typical input capacitance at 10V Vds. Single element per chip, configured as Quad Drain Triple Source. Packaged in an 8-pin HWSON EP (SON family) surface-mount plastic package with no leads, measuring 3.1mm x 2.9mm x 0.8mm(Max).
Renesas RJK03K8DNS-00-J5 technical specifications.
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