N-channel Power MOSFET, 30V drain-source voltage, 25A continuous drain current. Features 6.4mΩ maximum drain-source resistance at 10V, 12.3nC typical gate charge at 4.5V, and 1550pF typical input capacitance at 10V. Encased in an 8-pin HWSON package with 0.65mm pin pitch, measuring 3.1mm x 3mm x 0.8mm. Surface mountable with a maximum power dissipation of 15000mW and operating temperature range of -55°C to 150°C.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas RJK03L3DNS-00-J5 technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Material
Si
Maximum Drain Source Resistance
6.4@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1550@10VpF
Maximum Power Dissipation
15000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK03L3DNS-00-J5 Datasheet
Download the complete datasheet for Renesas RJK03L3DNS-00-J5 to view detailed technical specifications.
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