N-channel enhancement mode silicon power MOSFET in an 8-pin HWSON surface-mount package. Features a 30V drain-source voltage, 25A continuous drain current, and low 6.9mOhm drain-source resistance at 8V Vgs. Package dimensions are 3.1mm length, 3mm width, and 0.8mm height with a 0.65mm pin pitch. Operates across a -55°C to 150°C temperature range.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas RJK03N9DNS-00-J5 technical specifications.
General
| Package/Case | HWSON |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3(Min) |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 25A |
| Material | Si |
| Maximum Drain Source Resistance | 6.9@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2180@10VpF |
| Maximum Power Dissipation | 15000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Renesas RJK03N9DNS-00-J5 Datasheet
Download the complete datasheet for Renesas RJK03N9DNS-00-J5 to view detailed technical specifications.
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