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Technical Specifications
Renesas RJK0452DPB-00#J5 technical specifications.
General
Avalanche Energy Rating (Eas)
40.5mJ
Case Connection
DRAIN
Drain Current-Max (ID)
45A
Drain-source On Resistance-Max
4.7mR
DS Breakdown Voltage-Min
40V
Feedback Cap-Max (Crss)
270pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
55W
Pulsed Drain Current-Max (IDM)
180A
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas RJK0452DPB-00#J5 Datasheet
Download the complete datasheet for Renesas RJK0452DPB-00#J5 to view detailed technical specifications.
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