N-channel enhancement mode power MOSFET, silicon, 40V drain-source voltage, 45A continuous drain current. Features 3.8mOhm maximum drain-source on-resistance at 10V Vgs. Surface mountable LFPAK package with 5 pins (4+tab), gull-wing leads, 4.9mm x 3.95mm dimensions. Operates from -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0455DPB-00#J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Drain Source Resistance
3.8@10VmOhm
Typical Gate Charge @ Vgs
34@10VnC
Typical Gate Charge @ 10V
34nC
Typical Input Capacitance @ Vds
2550@10VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK0455DPB-00#J5 Datasheet
Download the complete datasheet for Renesas RJK0455DPB-00#J5 to view detailed technical specifications.
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