N-channel enhancement mode silicon power MOSFET, 60V drain-source voltage, 35A continuous drain current. Features 67mΩ maximum drain-source on-resistance at 10V Vgs, 35nC typical gate charge, and 2550pF typical input capacitance. Packaged in a 5-pin LFPAK surface-mount plastic package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Operates from -55°C to 150°C with a maximum power dissipation of 60W.
PackageLFPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJK0655DPB-00-J5 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | LFPAK |
| Package/Case | LFPAK |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.95 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.08 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 35A |
| Material | Si |
| Maximum Drain Source Resistance | 67@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 2550@10VpF |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Renesas RJK0655DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK0655DPB-00-J5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.