
N-channel enhancement mode power MOSFET, silicon, 80V drain-source voltage, 25A continuous drain current. Features 13mΩ maximum drain-source resistance at 10V Vgs, 27nC typical gate charge, and 2000pF typical input capacitance. Packaged in a 5-pin LFPAK surface-mount plastic package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Operates from -55°C to 150°C with 55W maximum power dissipation.
Renesas RJK0854DPB-00-J5 technical specifications.
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