N-channel enhancement mode power MOSFET, 80V drain-source voltage, 35A continuous drain current. Features 8.9 mOhm maximum drain-source resistance at 10V Vgs, 40 nC typical gate charge, and 3000 pF typical input capacitance. Surface mountable in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Operates from -55°C to 150°C with a maximum power dissipation of 65W.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0856DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
80V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
35A
Material
Si
Maximum Drain Source Resistance
8.9@10VmOhm
Typical Gate Charge @ Vgs
40@10VnC
Typical Gate Charge @ 10V
40nC
Typical Input Capacitance @ Vds
3000@10VpF
Maximum Power Dissipation
65000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
585pF
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK0856DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK0856DPB-00-J5 to view detailed technical specifications.
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