N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 23A continuous drain current. This surface-mount device utilizes a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Key electrical characteristics include a maximum drain-source on-resistance of 17mΩ at 10V, typical gate charge of 35nC, and typical input capacitance of 2550pF. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK1055DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
23A
Material
Si
Maximum Drain Source Resistance
17@10VmOhm
Typical Gate Charge @ Vgs
35@10VnC
Typical Gate Charge @ 10V
35nC
Typical Input Capacitance @ Vds
2550@10VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK1055DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK1055DPB-00-J5 to view detailed technical specifications.
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