N-channel enhancement mode power MOSFET featuring 450V drain-source voltage and 27A continuous drain current. This through-hole component utilizes a TO-3P package with a single element configuration and N-type channel. Key specifications include a maximum drain-source on-resistance of 200 mOhm at 10V, typical gate charge of 61.8 nC, and typical input capacitance of 2600 pF at 25V. Maximum power dissipation is rated at 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
Quick Jump:
Technical Specifications
Renesas RJK4515DPK-00-T0 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3P
Package/Case
TO-3P
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
18.9
Seated Plane Height (mm)
21.9
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
450V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
27A
Material
Si
Maximum Drain Source Resistance
200@10VmOhm
Typical Gate Charge @ Vgs
61.8@10VnC
Typical Gate Charge @ 10V
61.8nC
Typical Input Capacitance @ Vds
2600@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK4515DPK-00-T0 Datasheet
Download the complete datasheet for Renesas RJK4515DPK-00-T0 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.