N-channel enhancement mode power MOSFET featuring 450V drain-source voltage and 27A continuous drain current. This through-hole component utilizes a TO-3P package with a single element configuration and N-type channel. Key specifications include a maximum drain-source on-resistance of 200 mOhm at 10V, typical gate charge of 61.8 nC, and typical input capacitance of 2600 pF at 25V. Maximum power dissipation is rated at 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Renesas RJK4515DPK-00-T0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 18.9 |
| Seated Plane Height (mm) | 21.9 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 450V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 27A |
| Material | Si |
| Maximum Drain Source Resistance | 200@10VmOhm |
| Typical Gate Charge @ Vgs | 61.8@10VnC |
| Typical Gate Charge @ 10V | 61.8nC |
| Typical Input Capacitance @ Vds | 2600@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas RJK4515DPK-00-T0 Datasheet
Download the complete datasheet for Renesas RJK4515DPK-00-T0 to view detailed technical specifications.
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