N-channel power MOSFET featuring 500V drain-source voltage and 25A continuous drain current. This single-element silicon transistor is housed in a TO-3FM package with 3 pins and a tab, designed for through-hole mounting. It offers a low on-resistance of 240 mOhm at 10V Vgs and a maximum power dissipation of 60W. Operating temperature range is -55°C to 150°C.
PackageTO-3FM
MountingThrough Hole
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Technical Specifications
Renesas RJK5015DPM-00-T1 technical specifications.
General
Package/Case
TO-3FM
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
5.5
Seated Plane Height (mm)
24.9
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
25A
Material
Si
Maximum Drain Source Resistance
240@10VmOhm
Typical Gate Charge @ Vgs
66@10VnC
Typical Gate Charge @ 10V
66nC
Typical Input Capacitance @ Vds
2600@25VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK5015DPM-00-T1 Datasheet
Download the complete datasheet for Renesas RJK5015DPM-00-T1 to view detailed technical specifications.
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