N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 2A continuous drain current. This single-element transistor is housed in a 3-pin LDPAK(S)-1 surface-mount package with gull-wing leads, offering a 2.54mm pin pitch. Key specifications include a maximum power dissipation of 35W, a low 6800mOhm drain-source resistance at 10V, and a typical gate charge of 9.2nC. Operating temperature range is -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJK6002DPE-00#J3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | LDPAK(S)-1 |
| Package Description | Large Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 8.6 |
| Package Height (mm) | 4.44 |
| Seated Plane Height (mm) | 4.54 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2A |
| Maximum Drain Source Resistance | 6800@10VmOhm |
| Typical Gate Charge @ Vgs | 9.2@10VnC |
| Typical Gate Charge @ 10V | 9.2nC |
| Typical Input Capacitance @ Vds | 165@25VpF |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJK6002DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJK6002DPE-00#J3 to view detailed technical specifications.
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