N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 10A continuous drain current. This single, dual-drain transistor utilizes SJMOS process technology and is housed in a 3-pin MP-3A surface-mount plastic package with a tab. Key specifications include a maximum gate-source voltage of 30V, 670mΩ drain-source resistance at 10V, and 500pF input capacitance at 25V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 50000mW.
PackageMP-3A
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJK60S2DPD-00#J2 technical specifications.
General
| Package/Case | MP-3A |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SJMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 10A |
| Maximum Drain Source Resistance | 670@10VmOhm |
| Typical Input Capacitance @ Vds | 500@25VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJK60S2DPD-00#J2 Datasheet
Download the complete datasheet for Renesas RJK60S2DPD-00#J2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.