N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 10A continuous drain current. This single, dual-drain transistor utilizes SJMOS process technology and is housed in a 3-pin MP-3A surface-mount plastic package with a tab. Key specifications include a maximum gate-source voltage of 30V, 670mΩ drain-source resistance at 10V, and 500pF input capacitance at 25V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 50000mW.
PackageMP-3A
MountingSurface Mount
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Technical Specifications
Renesas RJK60S2DPD-00#J2 technical specifications.
General
Package/Case
MP-3A
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
670@10VmOhm
Typical Input Capacitance @ Vds
500@25VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S2DPD-00#J2 Datasheet
Download the complete datasheet for Renesas RJK60S2DPD-00#J2 to view detailed technical specifications.
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