N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element transistor utilizes SJMOS process technology and is housed in a TO-220FP package with a 3-pin through-hole configuration. Key specifications include a maximum gate-source voltage of 30V and a drain-source on-resistance of 670mOhm at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 26300mW.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S2DPP-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Seated Plane Height (mm)
19.05
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
670@10VmOhm
Typical Input Capacitance @ Vds
500@25VpF
Maximum Power Dissipation
26300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S2DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S2DPP-E0#T2 to view detailed technical specifications.
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