N-channel Power MOSFET, 600V drain-source voltage, 12A continuous drain current, and 440mOhm drain-source resistance at 10V. Features SJMOS process technology, single dual drain configuration, and enhancement mode channel type. Packaged in a 3-pin MP-3A surface mount plastic case with dimensions of 6.6mm x 6.1mm x 2.3mm. Operates from -55°C to 150°C with a maximum power dissipation of 73.5W.
PackageMP-3A
MountingSurface Mount
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Technical Specifications
Renesas RJK60S3DPD-00#J2 technical specifications.
General
| Package/Case | MP-3A |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SJMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 12A |
| Maximum Drain Source Resistance | 440@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 710@25VpF |
| Maximum Power Dissipation | 73500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJK60S3DPD-00#J2 Datasheet
Download the complete datasheet for Renesas RJK60S3DPD-00#J2 to view detailed technical specifications.
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