N-channel Power MOSFET, 600V drain-source voltage, 12A continuous drain current, and 440mOhm drain-source resistance at 10V. Features SJMOS process technology, single dual drain configuration, and enhancement mode channel type. Packaged in a 3-pin MP-3A surface mount plastic case with dimensions of 6.6mm x 6.1mm x 2.3mm. Operates from -55°C to 150°C with a maximum power dissipation of 73.5W.
PackageMP-3A
MountingSurface Mount
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Technical Specifications
Renesas RJK60S3DPD-00#J2 technical specifications.
General
Package/Case
MP-3A
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
12A
Maximum Drain Source Resistance
440@10VmOhm
Typical Gate Charge @ Vgs
13@10VnC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
710@25VpF
Maximum Power Dissipation
73500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S3DPD-00#J2 Datasheet
Download the complete datasheet for Renesas RJK60S3DPD-00#J2 to view detailed technical specifications.
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